Please use this identifier to cite or link to this item: https://physrep.ff.bg.ac.rs/handle/123456789/1092
Title: Nanocrystalline Zn<inf>2</inf>SnO<inf>4</inf>/SnO<inf>2</inf>: Crystal structure and humidity influence on complex impedance
Authors: Nikolic, Maria Vesna
Labus, Nebojsa J.
Pavlovic, Vera P.
Markovic, Smilja
Lukovic, Miloljub D.
Tadić, Nenad B. 
Vujancevic, Jelena D.
Vlahovic, Branislav
Pavlovic, Vladimir B.
Keywords: Complex impedance;Crystal structure;Humidity;SnO 2;Solid-state reaction;Zn SnO 2 4
Issue Date: 1-Dec-2020
Journal: Journal of Electroceramics
Abstract: 
Nanocrystalline Zn2SnO4/SnO2 powder was obtained by a solid state reaction of ZnO and SnO2 nanopowders mixed in the molar ratio 1:1. The phase composition of the obtained powder was studied by XRD and Raman spectroscopy, morphology and texture were characterized by FESEM, TEM, BET and Hg porosimetry, while XPS and FTIR spectroscopy were used to determine the surface chemistry. The influence of humidity on complex impedance was monitored on bulk samples in the relative humidity (RH) range 30–90% in a climatic chamber in the frequency range 42 Hz- 1 MHz at working temperatures of 25 and 50 °C. Change in RH had a significant influence on impedance reduction, especially noticeable in the lower frequency range, indicating potential application of this nanocomposite as a humidity sensing material. Increase in RH led to an increase in AC conductivity that changed with frequency according to the Jonscher power law. The frequency exponent decreased with increase in RH and sample temperature indicating that the correlated hopping barrier model is the dominant conduction mechanism. Complex impedance was analyzed using an equivalent circuit consisting of a parallel resistance and constant phase element, showing the dominant influence of grain boundaries at both working temperatures (25 and 50 °C). The resistance decreased, while the capacitance and relaxation frequency increased with increase in RH. At high humidity an added Wartburg element enabled modeling of the charge diffusion process.
URI: https://physrep.ff.bg.ac.rs/handle/123456789/1092
ISSN: 1385-3449
DOI: 10.1007/s10832-021-00232-z
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