Epitaxial growth by monolayer-restricted galvanic displacement

Abstract

The development of a new method for epitaxial growth of metals in solution by galvanic displacement of layers pre-deposited by underpotential deposition (UPD) was discussed and experimentally illustrated throughout the lecture. Cyclic voltammetry (CV) and scanning tunneling microscopy (STM) were employed to perform and monitor a "quasi-perfect", two-dimensional growth of Ag on Au(111), Cu on Ag(111), and Cu on Au(111) by repetitive galvanic displacement of underpotentially deposited monolayers. A comparative study emphasizes the displacement stoichiometry as an efficient tool for thickness control during the deposition process and as a key parameter that affects the deposit morphology. The excellent quality of the layers deposited by monolayer-restricted galvanic displacement was manifested by steady UPD voltammetry and ascertained by the flat and uniform surface morphology that was maintained during the entire growth process. © 2012 Copyright (CC) SCS.