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Please use this identifier to cite or link to this item: https://physrep.ff.bg.ac.rs/handle/123456789/124
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dc.contributor.authorBozovic, Ien_US
dc.contributor.authorLogvenov, Gen_US
dc.contributor.authorBelča, Ivanen_US
dc.contributor.authorNarimbetov, Ben_US
dc.contributor.authorSveklo, Ien_US
dc.date.accessioned2022-06-30T16:05:35Z-
dc.date.available2022-06-30T16:05:35Z-
dc.date.issued2002-09-02-
dc.identifier.issn0031-9007-
dc.identifier.urihttps://physrep.ff.bg.ac.rs/handle/123456789/124-
dc.description.abstractThe report that T(c) was doubled in underdoped La2-xSrxCuO4 films under compressive epitaxial strain has stirred great interest. We show that such films are extremely sensitive to oxygen intake, even at very low temperature, with startling consequences including colossal lattice expansion and a crossover from semiconductor to metallic behavior. We can bring T(c) up to 40 K in La2CuO4 films on SrTiO3 substrates-without any Sr doping and under tensile strain. On LaSrAlO4 substrates, we reached T(c)=51.5 K, the highest so far in La2-xSrxCuO4.en_US
dc.language.isoenen_US
dc.relation.ispartofPhysical review lettersen_US
dc.titleEpitaxial strain and superconductivity in La2-xSrxCuO4 thin filmsen_US
dc.typeJournal Articleen_US
dc.identifier.doi10.1103/PhysRevLett.89.107001-
dc.identifier.pmid12225215-
dc.identifier.scopus2-s2.0-84985029692-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/84985029692-
dc.relation.issue10en_US
dc.relation.volume89en_US
dc.relation.firstpage107001en_US
item.openairetypeJournal Article-
item.cerifentitytypePublications-
item.fulltextNo Fulltext-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextnone-
crisitem.author.orcid0000-0001-6124-5333-
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