Please use this identifier to cite or link to this item: https://physrep.ff.bg.ac.rs/handle/123456789/182
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dc.contributor.authorLabat, J. M.en
dc.contributor.authorBukvić, Srđanen
dc.date.accessioned2022-07-05T16:23:51Z-
dc.date.available2022-07-05T16:23:51Z-
dc.date.issued1988-09-14en
dc.identifier.issn0022-3727en
dc.identifier.urihttps://physrep.ff.bg.ac.rs/handle/123456789/182-
dc.description.abstractThe influence of argon impurities on the optogalvanic signal induced on neon lines was studied experimentally and theoretically. In particular, the amplitude and sign of the optogalvanic signal due to resonance pumping of the 609.6 nm line of neon were found to be greatly influenced by Penning ionisation of argon atoms by neon atoms excited to one of the 1s states. The model describes the transient effects found experimentally and the pressure and discharge current dependences of stationary optogalvanic signal values. © 1988 IOP Publishing Ltd.en
dc.relation.ispartofJournal of Physics D: Applied Physicsen
dc.titleThe influence of some impurities on the optogalvanic signalen
dc.typeArticleen
dc.identifier.doi10.1088/0022-3727/21/9/013en
dc.identifier.scopus2-s2.0-0024073003en
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/0024073003en
dc.relation.issue9en
dc.relation.volume21en
dc.relation.firstpage1396en
dc.relation.lastpage1402en
item.openairetypeArticle-
item.cerifentitytypePublications-
item.fulltextNo Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextnone-
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