Please use this identifier to cite or link to this item: https://physrep.ff.bg.ac.rs/handle/123456789/480
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dc.contributor.authorIskrenović, Predragen
dc.contributor.authorKrstić, Ivan B.en
dc.contributor.authorObradović, Bratislaven
dc.contributor.authorKuraica, Miloraden
dc.date.accessioned2022-07-12T15:41:44Z-
dc.date.available2022-07-12T15:41:44Z-
dc.date.issued2014-05-14en
dc.identifier.issn0021-8979en
dc.identifier.urihttps://physrep.ff.bg.ac.rs/handle/123456789/480-
dc.description.abstractTemperature of a commercial AlGaInP/GaInP quantum well laser diode (LD) is measured using two methods: peak wavelength shift and the diode voltage drop caused by working current. Time evolutions of temperature obtained by the two methods during the LD self-heating are measured and compared. No significant difference between the thus obtained temperature evolutions is obtained. Correlation between the LD voltage drop and the laser radiation frequency is established using a simple four-level semiconductor laser scheme and the LD gap energy is estimated. The LD gap energy decreases from 1.66eV to 1.56eV for temperature increase of 21K, at close to room temperature. It is found that LD's frequency decrease is caused by the gap energy decrease. © 2014 AIP Publishing LLC.en
dc.relation.ispartofJournal of Applied Physicsen
dc.titleCorrelation between measured voltage and observed wavelength in commercial AlGaInP laser diodeen
dc.typeArticleen
dc.identifier.doi10.1063/1.4876747en
dc.identifier.scopus2-s2.0-84901495534en
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/84901495534en
dc.relation.issue18en
dc.relation.volume115en
item.grantfulltextnone-
item.openairetypeArticle-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextNo Fulltext-
crisitem.author.orcid0000-0002-3221-7779-
crisitem.author.orcid0000-0001-8201-8500-
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