Influence of self-absorption on plasma diagnostics by emission spectral lines

Abstract

Accurate optical emission spectroscopy (OES) measurements are necessary for plasma semiconductor processing and for optical emission analysis. In this paper we investigate the effects of self-absorption on the most important neutral Argon spectra lines. One of these Argon spectral lines (750 nm) is frequently used for actinometry. The experiment is performed in a reactive ion etch (RIE) capacitively coupled plasma (CCP) system. A comprehensive design of experiments has been created to establish all plasma conditions, power, pressure and gas flow rate which affect the Argon emission intensity by self-absorption. The results are then compared to theoretical calculated line ratios.