Epitaxial growth of Cu on Au(111) and Ag(111) by surface limited redox replacement

Abstract

The growth of ultra thin copper films by surface limited redox replacement is discussed and experimentally illustrated. Cyclic Voltammetry and Scanning Tunneling Microscopy (STM) are employed to carry out and monitor the two-dimensional (2D) growth of up to 60 monolayers (ML) of Cu on Ag (111) and Au(111) by multiple redox replacement of underpotentially deposited (UPD) Pb used as a sacrificial metal. Open circuit potential monitoring during the replacement reaction is used to control the completion of each deposition event. Anodic film stripping is performed to determine the film thickness and calculate the yield of the employed deposition strategy. The excellent film quality is manifested by a distinct peak voltammetry and ascertained by in-situ STM showing uniform surface morphology maintained during the entire growth process. copyright The Electrochemical Society.