Please use this identifier to cite or link to this item: https://physrep.ff.bg.ac.rs/handle/123456789/311
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dc.contributor.authorDojčinović, I. P.en
dc.contributor.authorKuraica, Miloraden
dc.contributor.authorRandjelović, D.en
dc.contributor.authorMati Ć, M.en
dc.contributor.authorPuri Ć, J.en
dc.date.accessioned2022-07-12T15:09:05Z-
dc.date.available2022-07-12T15:09:05Z-
dc.date.issued2006-01-01en
dc.identifier.isbn1424401178en
dc.identifier.urihttps://physrep.ff.bg.ac.rs/handle/123456789/311-
dc.description.abstractSilicon single crystal surfaces have been modified by supersonic compression plasma flows (CPF) action. Triangular and rhombic regular fracture features are obtained on the Si (111), while rectangular ones are produced on Si (100) surface. Some of these regular structures can become free from the underlying bulk, formed as blocks ejected from the surface. Surface cleavage and exfoliation phenomena as the results of specific conditions during CPF interaction on silicon surface are, also, observed. Such conditions are the results of rapid heating and melting of surface layer, long existence of molten layer (∼40 μs) and fast cooling and recrystalisation taking place under the high dynamic pressure and thermodynamic parameters gradients. © 2006 IEEE.en
dc.relation.ispartof2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedingsen
dc.titleSilicon surface exfoliation under compression plasma flow actionen
dc.typeConference Paperen
dc.identifier.doi10.1109/ICMEL.2006.1650915en
dc.identifier.scopus2-s2.0-77956512249en
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/77956512249en
dc.relation.firstpage137en
dc.relation.lastpage140en
item.grantfulltextnone-
item.openairetypeConference Paper-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextNo Fulltext-
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