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https://physrep.ff.bg.ac.rs/handle/123456789/598
Title: | Raman scattering analysis of silicon dioxide single crystal treated by direct current plasma discharge | Authors: | Popović, Dušan M. Milosavljević, Vladimir Žekić, Andrijana Romcevic, N. Daniels, S. |
Issue Date: | 31-Jan-2011 | Journal: | Applied Physics Letters | Abstract: | Low-k materials such as silicon dioxide (SiO2) play an important role in the semiconductor industry. Plasma has become indispensable for advanced materials processing. In this work a treatment of SiO2 single crystal by direct current plasma discharge is studied in detail. Offline metrology is conducted for silicon dioxide wafers by Raman scattering, energy-dispersive x-ray spectroscopy, and ellipsometry. Broad Raman peak at around 2800 cm-1 is observed for the treated SiO2 wafers. Effects of plasma treatment on position of this peak are reported in the paper. An analysis of this correlation could be a framework for creating virtual etch rate sensors, which might be of importance in managing plasma etching processes. © 2011 American Institute of Physics. |
URI: | https://physrep.ff.bg.ac.rs/handle/123456789/598 | ISSN: | 0003-6951 | DOI: | 10.1063/1.3543838 |
Appears in Collections: | Journal Article |
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